Samsung SSD 850 PRO 2.5" SATA III 1TB
Efficient Power Management with Low Active Write Power Consumption and Device Sleep Mode (2mW).

Overview:

Designed for high-end computing on client PCs, our 1TB 850 PRO Solid State Drive (SSD) is powered by Samsung's own 3D V-NAND technology which delivers higher density and faster write speed compared with traditional 20nm planar NAND flash.

• Exceptional Performance with Blazing Fast Read/Write Speeds
• Enhanced Endurance and Reliability: 150TBW for 10 years (Compared to 73TBW for 5 years on 840 PRO Models)
• Efficient Power Management with Low Active Write Power Consumption and Device Sleep Mode (2mW)
• Featuring RoHS Compliance

Features

3D V-NAND Technology

Samsung's own cutting-edge 32 layer 3D V-NAND technology delivers up to two times the density and write speed of traditional 20nm planar NAND flash.

Exceptional Read/Write Performance

Experience a high 100,000 IOPS random read speed and 470MB/s sequential write speed. In addition, RAPID mode allows you to reach optional higher speeds, thanks to Magician software that allows you to enhance performance by processing data on a system level using free PC memory (DRAM) as a cache.

Enhanced Endurance and Reliability

With a top level industry warranty offering 150 Total Bytes Written (TBW) for 10 years, and our 3D V-NAND flash's higher endurance compared to conventional 2D planar type NAND flash, our 850 PRO SSDs can consistently meet the needs of high end use and heavy workloads with ease.

Efficient Power Management

Thanks to exceptionally low active power consumption, you can work efficiently for long periods of time. Device Sleep Mode (2mW) is also supported for ultra-thin laptop PCs and high-end desktop main boards.

Self-Encrypting Drive

The drive includes an AES-256-bit hardware-based, full disk encryption engine that secures your data without sacrificing performance.

100% Samsung Components

Enjoy end to end full integration with 100% Samsung Components, from the Samsung 3-core MEX Controller to the Samsung LPDDR2 DRAM cache memory and 3D V-NAND technology.